학술논문
Self-aligned inversion channel In0.53Ga0.47As N-MOSFETs with ALD-Al2O3 and MBE-Al2O3/Ga2O3(Gd2O3) as gate dielectrics
Document Type
Conference
Author
Source
2009 International Symposium on VLSI Technology, Systems, and Applications VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on. :141-142 Apr, 2009
Subject
Language
ISSN
1524-766X
Abstract
Self-aligned inversion-channel In 0.53 Ga 0.47 As n-MOSFETs with ex-situ atomic-layer-deposited Al 2 O 3 and in-situ ultra-high-vacuum deposited Al 2 O 3 /Ga 2 O 3 (Gd 2 O 3 ) as gate dielectrics have been demonstrated. Both devices exhibit excellent DC characteristics, including high drain currents and transconductances. In addition, RF characteristics of both devices were analyzed; without using any isolation, non de-embedded current gain cutoff frequency (fT) and maximum oscillation frequency (f max ) of ∼ 3.1 and 1.1 GHz (ALD-Al 2 O 3 ) and of ∼ 17.9 and 11.2 GHz (MBE-Al 2 O 3 /Ga 2 O 3 (Gd 2 O 3 )), respectively, have been obtained.