학술논문

A Comprehensive Hot Carrier Injection with Voltage Ramp Stress (HCI-VRS) through Different Model Verification for More than Moore Diversity Application
Document Type
Conference
Source
2024 IEEE International Reliability Physics Symposium (IRPS) International Reliability Physics Symposium (IRPS), 2024 IEEE. :1-4 Apr, 2024
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Industries
Degradation
Current measurement
Stability analysis
Silicon
Reliability
Electrical resistance measurement
Hot carrier
High-k gate dielectric
Moore's Law
Semiconductor device reliability
Silicon-on-insulator
Language
ISSN
1938-1891
Abstract
HCI-CVS is an accepted way for process qualification in worldwide industries. However, the efficiency of reliability testing is important to more than Moore diversity application such as 3DIC, NVM, HV/BCD, CIS, etc. This paper integrates the commonly used reliability models in the industry. Through VRS and silicon verification, the comparable results to CVS can be obtained. And a novel VRS-analyzer for process limits and accelerated testing voltage is proposed, which can also be used to assess the health of dynamic voltage stress (DVS) voltage. This method can improve evaluation speed and reduce stress energy by about >10X.