학술논문
0.18 µm BCD technology platform with best-in-class 6 V to 70 V power MOSFETs
Document Type
Conference
Author
Source
2012 24th International Symposium on Power Semiconductor Devices and ICs Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on. :401-404 Jun, 2012
Subject
Language
ISSN
1943-653X
1063-6854
1946-0201
1063-6854
1946-0201
Abstract
This paper presents a single BCD technology platform with high performance power devices at a wide range of operating voltages. The platform offers 6 V to 70 V LDMOS devices. All devices offer best-in-class specific on-resistance of 20 to 40 % lower than that of the state-of-the-art IC-based LDMOS devices and robustness better than the square SOA (safe-operating-area). Fully isolated LDMOS devices, in which independent bias is capable for circuit flexibility, demonstrate superior specific on-resistance (e.g. 11.9 mΩ-mm 2 for breakdown voltage of 39 V). Moreover, the unusual sudden current enhancement appeared in the I D -V D saturation region of most of the high voltage LDMOS devices is significantly suppressed.