학술논문
Study of THz Oscillations in GaN-Based Planar Nanodevices
Document Type
Conference
Author
Source
2010 Symposium on Photonics and Optoelectronics Photonics and Optoelectronic (SOPO), 2010 Symposium on. :1-4 Jun, 2010
Subject
Language
ISSN
2156-8464
2156-8480
2156-8480
Abstract
The feasibility of THz oscillations in a GaN-based planar nanoscale unipolar diode, or a self-switching device (SSD), is analyzed using Monte Carlo simulations. The origin of THz oscillations is contributed to Gunn-effect. The dependence of the Gunn oscillations on geometric parameters and bias conditions has been studied. By using proper parameters, the oscillation frequency can reach 0.6 THz. Moreover, potential applications are discussed in terms of the ease of heat dissipation and generation of oscillations at different frequencies on a single chip, in contrast to a conventional vertical-structure Gunn diode.