학술논문
A High Speed High Voltage Normally-off SiC Vertical JFET Power Device
Document Type
Conference
Author
Source
2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) Electron Devices and Solid-State Circuits (EDSSC), 2019 IEEE International Conference on. :1-3 Jun, 2019
Subject
Language
Abstract
A high speed 3350V normally-off SiC vertical junction field-effect transistor (VJFET) power device is proposed in this paper. The gate-drain Miller capacitance of the proposed VJFET is greatly reduced in comparison with that of the conventional trenched-and-implanted JFET(TI-JFET), which results in a less than 25ns extremely fast turning-off speed. Meantime, the proposed SiC VJFET also has a low specific on-resistance with a value of 11.8 $\mathrm{m} \Omega \cdot \mathrm{cm}^{2}$ when $V_{\mathrm{GS}}$ is 2.6V.