부산대학교 도서관

A novel diode-clamped carrier-stored SOI lateral superjunction IGBT is proposed and investigated by numerical simulations. The propose LIGBT remarkably features a carrier stored layer (n-CS) beneath the p-base region, an superjunction (SJ) layer in the drift region, a p-shield region connected to the cathode electrode through two integrated series diodes via floating ohmic contact (FOC) and a trench oxide embedded between the p+ and n+ anode. The heavily doping n-CS layer can effectively reduce the on-state voltage ($V_{\text{ON}}$), and the p-shield region eliminates the impact on the breakdown voltage (BV) from the high doping of the n-CS (Ncs). In addition, the connection between the integrated series diodes and the p-shield region can help to achieve a quite low saturation current. Finally, the proposed CSTBT can realized an ultralow $E_{\text{off}}$ thanks to the rapid extraction of the excess carriers by the SJ layer. The simulation results indicate that, at the same $V_{\text{ON}}, E_{\text{off}}$ of the proposed LTIGBT is 90% and 97% lower than those of the conventional LIGBT (LIGBT-1) and the separated shorted-anode LIGBT (LIGBT-2), respectively.