학술논문
Novel GaNAs and GaNP-based nanowires — Promising materials for optoelectronics and photonics
Document Type
Conference
Author
Source
2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Nanotechnology (IEEE-NANO), 2016 IEEE 16th International Conference on. :38-41 Aug, 2016
Subject
Language
Abstract
In this paper we review our recent results on optical properties of coaxial nanowires (NWs) based on dilute nitride alloys, such as GaAsN and GaNP. We show that these structures have a high structural and optical quality, and can potentially be used as polarized nano-scale light sources that emit linearly polarized light with the polarization direction perpendicular to the wire axis even in zinc blende NWs of various diameters. We also demonstrate that, though the GaN x P 1−x alloys have rather wide bandgap energies of 1.9 – 2.3 eV, the coaxial GaNP NWs absorb infrared light via two-step two-photon absorption.