학술논문

Novel GaP/GaNP core/shell nanowires for optoelectronics and photonics
Document Type
Conference
Source
2016 IEEE International Nanoelectronics Conference (INEC) Nanoelectronics Conference (INEC), 2016 IEEE International. :1-3 May, 2016
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Nanowires
Optical polarization
Silicon
Photonic band gap
Photonics
Nitrogen
Optical variables measurement
GaNP
gallium phosphide
nanowire
Language
ISSN
2159-3531
Abstract
GaNP-based nanowires (NWs) represent a novel material system that has a great potential in a variety of optoelectronic and photonic applications. In this paper we review our recent results showing that advantages provided by alloying with nitrogen can be realized and even further enhanced in novel coaxial GaNP NWs grown on Si substrates. Based on combined μ-photoluminescence and optically detected magnetic resonance measurements, we identify the optimum structural design of these nanowires. We also demonstrate that these novel structures have potential as nanoscale light sources of linearly polarized light.