학술논문
A Study on the Hf0.5Zr0.5O2 Ferroelectric Capacitors fabricated with Hf and Zr Chlorides
Document Type
Conference
Author
Source
2022 China Semiconductor Technology International Conference (CSTIC) Semiconductor Technology International Conference (CSTIC), 2022 China. :1-3 Jun, 2022
Subject
Language
Abstract
Ferroelectric capacitor memory devices with carbon-free Hf 0.5 Zr 0.5 O 2 (HZO) ferroelectric films are fabricated and characterized. The HZO ferroelectric films are deposited by ALD at temperatures from 225 to 300°C, with HfCl 4 and ZrCl 4 as the precursors. Residual chlorine from the precursors is measured and studied systematically with various process temperatures. 10nm HZO films with optimal ALD growth temperature at 275°C exhibit remanent polarization of 25µC/cm2 and cycle endurance of ~ 5×10 11 . Results will be compared with those from HZO films deposited with carbon containing metal-organic precursors.