부산대학교 도서관

RF performance comparison between InGaAs MOSFETs and ferroelectric field-effect transistors (FE-FETs) as a function of channel length ( ${L}_{{\text {ch}}}$ ) is investigated using a technology computer-aided design (TCAD) simulator. The RF characteristics and energy efficiencies of FE-FETs are shown to have performance parity or even inferiority as compared with the conventional MOSFETs at relatively long ${L}_{{\text {ch}}}$ . However, as ${L}_{{\text {ch}}}$ scaled down, FE-FETs with substantial performance enhancement are observed. The highest improvement in unit gain cutoff frequency ( ${f}_{T}$ ) and maximum oscillation frequency ( ${f}_{{\text {MAX}}}$ ) is 15.4% ( ${L}_{{\text {ch}}} = {75} \,\,\text {nm}$ ) and 22.5% ( ${L}_{{\text {ch}}} =85$ nm), respectively. In addition, for FE-FETs, device energy efficiencies are shown to achieve much higher improvement of 53.4% and 69.3% in transconductance generation factor (TGF) and transconductance frequency product (TFP), respectively, at an optimized ${L}_{{\text {ch}}}$ of 15 nm. The superior RF properties obtained in FE-FETs can be attributed to the higher effective electron velocity ( ${V}_{{\text {eff}}}$ ), better gate controllability, and reduced gate resistance ( ${R}_{{\text {g}}}$ ).