학술논문

21.4 A -108dBc THD+N, 2.3mW Class-H Headphone Amplifier with Power-Aware SIMO Supply Modulator
Document Type
Conference
Source
2024 IEEE International Solid-State Circuits Conference (ISSCC) Solid-State Circuits Conference (ISSCC), 2024 IEEE International. 67:384-386 Feb, 2024
Subject
Bioengineering
Communication, Networking and Broadcast Technologies
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Robotics and Control Systems
Charge pumps
Tracking loops
Limiting
Modulation
Bandwidth
Distortion
Gate leakage
Language
ISSN
2376-8606
Abstract
Class-G/H amplifiers are becoming popular in modern mobile devices with diverse communication systems for their high efficiency and low EMI [1–4]. However, three design issues that arise for high-fidelity Class-G/H amplifiers are: 1) Inaccurate envelope tracking limiting achievable full-path efficiency [1–3]; 2) THD+N degradation due to limited PSRR in output drivers; and 3) Distortions at high temperature arising from the DAC reference bias drift caused by a high gate leakage in the advanced process [5]. In the first issue, to achieve high full-path efficiency, a supply modulator needs to efficiently generate precise positive and negative envelope-tracking supplies for ground-referenced audio outputs. Compared to the conventional Buck-NCP (negative charge-pump) cascade topology [1], which has limited efficiency for the negative supply due to the two-stage conversion, the single-stage multi-level charge-pump in [2, 3] could generate both supplies more efficiently. However, the more than 1A of input peak current (I peak ) might cause serious electromigration and supply bouncing issues, restricting the envelope-tracking bandwidth [3]. In [2], the tracking bandwidth is 16Hz, thus limiting the full-path efficiency to 23.5% at 10mW output (1kHz). Additionally, the common constant ON-time (T ON ) discontinuous conduction mode (DCM) control scheme for buck converters can only optimize the efficiency in a narrow output voltage range, not suitable for wide-range supplies [6]. Second, the signal-dependent supply ripple at the high-frequency audio band might degrade THD+N seriously if the driver’s PSRR is not sufficient, for which a higher CMFB loop gain is required [7]. However, such design might compromise the amplifier stability. Lastly, the gate leakage might cause serious reference bias drift and generate I P /I N mismatch in a tri-level DAC. In [5], the gate-leakage-compensated off-transistor-based bias noise filter is introduced to reduce the impact. However, if the resistance of an off-transistor is too large, the increased gate leakage at high temperature might saturate the compensation amplifier, leading to severe distortions. To solve the aforementioned issues: 1) a single-stage inductor-based supply modulator is introduced to relieve I peak and then efficiently generate the fast envelope tracking at more than 1kHz, and a power-aware T ON control scheme is leveraged to enhance the envelope-tracking accuracy for all output power levels as well, thus improving the efficiency to 34.8% at 10mW output (1kHz); 2) A gain-boosting CMFB circuit with a new frequency compensation scheme is presented to enhance the loop gain without sacrificing the amplifier stability; 3) An R OFF -controlled technique is employed in the noise filter design to address the DAC reference bias drift and maintain the THD+N up to 85°C. Combining -these techniques, the Class-H amplifier achieves -108dBc THD+N, 126dB DR, and 2.3mW quiescent power.