학술논문
Improvement of Charge Programming and Retention by NH3 Plasma Treatment on Tunnel Oxide for SiO2/SixGe1-x/SiO2 Tri-layer Memory Devices
Document Type
Conference
Source
2007 International Semiconductor Device Research Symposium Semiconductor Device Research Symposium, 2007 International. :1-2 Dec, 2007
Subject
Language
Abstract
The aim of this paper is to study, the NH 3 plasma technique to improve the charge programming speed and retention time for the SiO 2 /Si x Ge 1-x /SiO 2 tri-layer memory devices. The modulated tunnel oxide energy band gap near Si x Ge 1-x /TO interface is suitable for enhancing the programming and charge retention performance.