학술논문
RF-pFET in fully depleted SOI demonstrates 420 GHz FT
Document Type
Conference
Author
Source
2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Radio Frequency Integrated Circuits Symposium (RFIC), 2017 IEEE. :84-87 Jun, 2017
Subject
Language
ISSN
2375-0995
Abstract
We report an experimental pFET with 420GHz f T , which to the best of our knowledge is the highest value reported for a silicon pFET. The transconductance is 1800uS/um. The technology is fully depleted silicon on insulator (FDSOI) with the pFET channel formed by SiGe condensation. This outstanding performance is achieved by a combination of layout and process optimization which minimizes capacitance and maximizes compressive strain on the channel. The technology features a high-k metal gate and short gate length (20nm drawn) in addition to the SiGe channel for high mobility.