학술논문
Aluminum-Doped Gadolinium Oxides as Blocking Layer for Improved Charge Retention in Charge-Trap-Type Nonvolatile Memory Devices
Document Type
Periodical
Author
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 56(11):2739-2745 Nov, 2009
Subject
Language
ISSN
0018-9383
1557-9646
1557-9646
Abstract
Aluminum-doped gadolinium oxides $\hbox{GdAlO}_{x}$ are proposed as a blocking oxide layer in charge-trap-type Flash memory cell devices. Greatly improved operation speed and charge retention properties have been demonstrated, compared to conventional $\hbox{Al}_{2}\hbox{O}_{3}$ blocking layer. The optimization of Al percentage in $\hbox{GdAlO}_{x}$, as well as charge loss mechanism in the memory cell device, has also been systematically studied.