학술논문
Performance breakthrough in 8 nm gate length Gate-All-Around nanowire transistors using metallic nanowire contacts
Document Type
Conference
Author
Source
2008 Symposium on VLSI Technology VLSI Technology, 2008 Symposium on. :34-35 Jun, 2008
Subject
Language
ISSN
0743-1562
2158-9682
2158-9682
Abstract
Parasitic S/D resistances in extremely scaled GAA nanowire devices can pathologically limit the device drive current performance. We demonstrate for the first time, that S/D extension dopant profile engineering together with successful integration of low resistivity metallic nanowire contacts greatly reduces parasitic resistances. This allows 8 nm gate length GAA nanowire devices in this work to attain record-high drive currents of 3740 μA/μm.