학술논문
Quantum transport of a high mobility two dimensional hole gas in a strained Ge quantum well
Document Type
Conference
Author
Source
2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International. :105-106 Jun, 2014
Subject
Language
Abstract
A high mobility (780,000 cm 2 /Vs) 2DHG has been created in a strained Ge quantum well structure, through B modulation doping. The mobility and carrier density were measured through Hall effect measurements at temperatures between 0.3 K and 300 K, revealing a low temperature carrier density of 2×10 11 cm −2 . Low temperature magnetoresistance measurements show a complex, multiple frequency oscillatory behavior in the SdH oscillations for this modulation doped quantum well. This may be attributed to oscillations from carriers in other layers in the heterostructure superimposed on the oscillations due to transport in the quantum well, due to parallel conduction.