부산대학교 도서관

This paper aims to provide a guideline with respect to a reproducible thermal transient measurement for SiC MOSFETs. Although the thermal transient measurement based on source-drain voltage is a widely applied method for characterizing the thermal properties of MOSFETs, the approach developed for silicon-based devices may not be directly applicable to SiC devices. Therefore, this paper investigates the thermal transient measurement method for SiC MOSFETs using the source-drain voltage as the temperature-sensitive electrical parameter. A comprehensive investigation of its linearity, sensitivity, and stability toward yielding the thermal structure-property of the device has been carried out. The investigation includes two primary characterization procedures: temperature calibration and cooling curve measurement. The associated key testing conditions, such as gate voltages, sensing and heating currents, etc., are covered. The study examines the impact of these conditions on both static and dynamic performance to provide a better understanding of the reproducible thermal transient measurement for SiC MOSFETs. The evaluation is also validated by different devices, including four SiC MOSFETs with different vendors, voltages, and currents.