학술논문

Non-TMR SEU-hardening techniques for SiGe HBT shift registers and clock buffers
Document Type
Conference
Source
2009 European Conference on Radiation and Its Effects on Components and Systems Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on. :504-507 Sep, 2009
Subject
Nuclear Engineering
Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Fields, Waves and Electromagnetics
radiation hardening by design (RHBD)
silicon-germanium (SiGe)
single event upset (SEU)
gated feedback cell (GFC)
bit error rate testing
Language
ISSN
0379-6566
Abstract
We report new results from both broad-beam, heavy-ion and proton experiments for circuit-level RHBD techniques in SiGe digital logic. Redundant circuit elements within the latches are used to significantly reduce single-event upset rates in shift registers and clock paths, without resorting to TMR techniques.