학술논문

Inversion channel MOSFETs in 3C-SiC on silicon
Document Type
Conference
Source
Proceedings. IEEE Lester Eastman Conference on High Performance Devices High performance devices High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on. :83-89 2002
Subject
Components, Circuits, Devices and Systems
MOSFETs
Silicon carbide
Substrates
Interface states
Photonic band gap
Oxidation
Semiconductor films
Thermal conductivity
Chemical vapor deposition
Crystalline materials
Language