부산대학교 도서관

$\hbox{TiO}_{x}$ thin-film transistors (TFTs) are fabricated using $\hbox{SiO}_{2}$ as gate dielectrics. The enhancement of the electric characteristics is observed after a postannealing processing including the reduction of the threshold voltage $V_{\rm th}$, the increase in mobility $\mu$, and the on/off ratio. The effect of the postannealing temperature on both the $\hbox{TiO}_{x}/\hbox{SiO}_{2}$ interfacial bonding structure and the $\hbox{TiO}_{x}$ crystallinity is investigated. We suggest that the interfacial modification at the $\hbox{TiO}_{x}/\hbox{SiO}_{2}$ interface contributes to the significant reduction of $V_{\rm th}$ due to the breaking of Si–O–Ti bonding. The improvement of the $\hbox{TiO}_{x}$ crystallinity and interfacial structure leads to the increase in $\mu$ and in the on/off ratio. The low-temperature annealing treatment at 200 $^{\circ}\hbox{C}$ is very effective to improve the $\hbox{TiO}_{x}/\hbox{SiO}_{2}$ interface structure.