학술논문

Subnanosecond Marx Generators for Picosecond Gain-Switched Laser Diodes
Document Type
Periodical
Source
IEEE Photonics Journal IEEE Photonics J. Photonics Journal, IEEE. 16(1):1-8 Feb, 2024
Subject
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Transistors
Capacitors
Generators
Diode lasers
Transient analysis
Semiconductor lasers
Impedance
Avalanche transistor
electric circuit
gain switch
laser diode
picosecond
pulse generation
Language
ISSN
1943-0655
1943-0647
Abstract
High precision time-of-flight based light detection and ranging (LiDAR) system needs compact ultrafast pulsed lasers, such as gain-switched semiconductor laser diodes, which have the advantages of low cost, small size, and mass-producible, for short pulse generation, and are of great interest in many other fields, where low-cost high-voltage electrical pulse generators are in demand to directly modulate laser diodes for practical applications. Here, we presented a low-cost subnanosecond electrical pulse generator based on avalanche transistors, with output electrical pulses having a maximum peak voltage of approximately 25 V and a minimum pulse width of approximately 450 ps, depending on load impedance. We applied the electrical pulses on a gallium nitride (GaN)-based blue-violet laser diode, and demonstrated typical gain-switching characteristics of the laser diode. The minimum pulse width of the first spike of the gain-switched optical pulses was as short as 23 ps. In addition, we constructed a field-programmable gate array (FPGA)-triggered Marx generator with programmable frequency, and demonstrated its practicability in characterizing the transient gain-switching properties of laser diodes with a streak camera. These results should be of significant interest for both industrial applications and scientific research.