학술논문

Interfacial property tuning of heavy metal/CoFeB for large density STT-MRAM
Document Type
Conference
Source
2017 17th Non-Volatile Memory Technology Symposium (NVMTS) Non-Volatile Memory Technology Symposium (NVMTS), 2017 17th. :1-4 Aug, 2017
Subject
Components, Circuits, Devices and Systems
Computing and Processing
General Topics for Engineers
Power, Energy and Industry Applications
Magnetic tunneling
Tunneling magnetoresistance
Damping
Thermal stability
Perpendicular magnetic anisotropy
Magnetomechanical effects
Interfacial PMA
TMR
Gilbert damping
MTJ
interface control
Language
Abstract
Perpendicular magnetic tunnel junctions (MTJs) based on MgO/CoFeB structures are of particular interest for spin-transfer torque magnetic random access memories (STT-MRAMs). However, their major challenges of combining both a large tunnel magneto-resistance ratio (TMR) and a low junction resistance, a strong interfacial perpendicular magnetic anisotropy (PMA) for the high thermal stability and a low STT switching critical current density are still to be met. In this paper, we show our recent progress in studying the pertinence of capping layers to several principal spintronic effects such as PMA, TMR and Gilbert damping. And we predict and experimentally prove the performance optimization the by the interfacial property tuning of heavy metal/CoFeB.