학술논문

Sub-nT Resolution of Single Layer Sensor Based on the AMR Effect in La2/3Sr1/3MnO3 Thin Films

Document Type

Periodical

Author

Enger, L.G.; Flament, S.; Bhatti, I.; Guillet, B.; Sing, M.L.C.; Pierron, V.; Lebargy, S.; Diez, J.M.; Vera, A.; Martinez, I.; Guerrero, R.; Perez, L.; Perna, P.; Camarero, J.; Miranda, R.; Gonzalez, M.T.; Mechin, L.

Source

IEEE Transactions on Magnetics IEEE Trans. Magn. Magnetics, IEEE Transactions on. 58(2):1-4 Feb, 2022

Subject

Fields, Waves and Electromagnetics
Magnetic anisotropy
Perpendicular magnetic anisotropy
Anisotropic magnetoresistance
Bridge circuits
Sensitivity
Magnetic noise
Voltage measurement
Anisotropic magnetoresistance (AMR)
functional oxide
La⅔Sr⅓MnO₃ thin film
magnetic sensor
planar Hall effect bridge (PHEB) sensor
uniaxial anisotropy

Language

ISSN

0018-9464
1941-0069

Abstract

Single-layer magnetoresistive sensors were designed in a Wheatstone bridge configuration using La 2/3 Sr 1/3 MnO 3 ferromagnetic oxide thin film. Uniaxial anisotropy was induced by performing epitaxial deposition of the films on top of vicinal SrTiO 3 substrate. X-ray scan confirms the high crystalline quality of the films and the magnetic anisotropy was checked by magneto-optical Kerr effect measurements. Thanks to the anisotropic magnetoresistive effect and the very low noise measured in the devices, sub-nT resolution was achieved above 100 Hz at 310 K.

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