학술논문
Raman scattering assessment of point defects in kesterite semiconductors: UV resonant Raman characterization for advanced photovoltaics
Document Type
Conference
Author
Source
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) Photovoltaic Specialist Conference (PVSC), 2017 IEEE 44th. :3285-3289 Jun, 2017
Subject
Language
Abstract
Raman spectroscopy has demonstrated to be a powerful tool for Cu 2 ZnSnSe 4 (CZTSe) characterization, allowing the assessment of relevant parameters such as crystal quality, secondary phases and defect presence. In this work a detailed analysis of CZTSe vibrational properties using non-bandgap Raman resonance effects is performed. UV-based Raman spectroscopy is presented as a promising technique for the precise assessment of V Cu and Znsn point defects, associated with 174 and 245 cm −1 Raman regions. Based on these results, correlation between the peak intensity, associated with V cu point defects, with the maximum value of the efficiency of the final devices is presented and discussed.