부산대학교 도서관

A 5G new-radio (NR) 2-stack differential 39 GHz Power Amplifier (P A) designed with ADNFETs in 45RFSOI technology is used to showcase superior CW and 5G performance and excellent reliability. Measured CW linear gain of ~12 dB, ~18 dBm Psat with P AE of 35.1 % is seen while 5G QPSK results show Plin ~13dBm@-22dB EVM and ~17dBm@-19dB ACPR at 1.7V VDD back-off conditions. Time domain waveforms followed by RF reliability characterization show that off-state Hot Carrier Injection (HCI) is a key fail mechanism under matched-Z load and VSWR. Key RF degradation metrics from long term RF stress show $\Delta \mathbf{Pout}, \Delta \mathbf{Gain} < 0.5\mathbf{dBm}$ and $\Delta \mathbf{PAR} < 1\%$ meeting overall 10yr lifetime criteria. Self-heating characterization show ~6 C increase at 1.6V/160mW dissipated power demonstrating excellent thermal stability. From 5G aging measurements and model sims, good model-hardware correlation is seen where gain degradation < 0.5 dB at 10y demonstrating overall superior performance and excellent reliability of the P A for 5G mm Wave applications.