학술논문
Cross validation of quantum simulations and optical measurements in single electron memories with silicon nano-crystallites
Document Type
Conference
Author
Source
International Conference on Simulation of Semiconductor Processes and Devices Simulation of semiconductor processes Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on. :179-182 2002
Subject
Language
Abstract
Quantum simulations of single electron memories (SEM) have been performed on single nano-crystals, axisymmetrical and far enough from their neighbors to allow Poisson and Schrodinger equations to be solved in polar coordinates. The variations of the transition energies with respect to the shape of the dots is discussed, arriving to the conclusion that the major dependency is with respect to the volume of the dots, while the tunneling current depends more on their flatness. For the first time, numerical simulation results are cross checked with photoluminescence and absorption measurements in silicon quantum dots.