학술논문
Deuterium effect on interface states and SILC generation in CHE stress conditions: A comparative study
Document Type
Conference
Author
Source
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) Electron devices meeting Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International. :339-342 2000
Subject
Language
Abstract
This paper investigates the generation of interface states (N/sub it/) and stress induced leakage current (SILC) in the stress regime of channel hot electrons (CHE) and the possible beneficial effect of deuterium annealing. Our results show that no isotope effect is observed on SILC even when a large isotope effect is simultaneously observed on N/sub it/. The generation of SILC seems to be always correlated to hot holes injection (HHI) whereas two different generation mechanisms for N/sub it/ can be identified.