학술논문
MOSFET modeling into the ballistic regime
Document Type
Conference
Author
Source
2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) Simulation of semiconductor processes and devices Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on. :23-26 2000
Subject
Language
Abstract
Physically-based full band Monte-Carlo simulations are compared with drift-diffusion simulations for channel lengths from 150 nm to 40 nm. Errors in the drift diffusion simulated I/sub ON/, g/sub m/ and channel velocities are quantified through comparison with Monte-Carlo simulations under realistic surface scattering conditions. Suggestions for improving the drift-diffusion results are also discussed.