학술논문
Gate oxides in 50 nm devices: thickness uniformity improves projected reliability
Document Type
Conference
Author
Source
International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) Electron devices Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International. :437-440 1999
Subject
Language
Abstract
We demonstrate that reliability projections can be improved significantly if oxide thickness uniformity is improved. Our results include a Weibull slope of 1.38 for an extremely uniform 1.6 nm oxide, and also a steeper voltage scaling factor than has been used in the past. Transistors with 50 nm gate-length and /spl sim/1.5 nm oxides exhibit soft breakdown, suggesting that it may be possible to relax current reliability specifications.