학술논문
GaN MOS-HEMT using atomic layer deposition Al/sub 2/O/sub 3/ as gate dielectric and surface passivation
Document Type
Conference
Author
Source
Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. High Performance Devices High Performance Devices, 2004. Proceedings. IEEE Lester Eastman Conference on. :167-172 2004
Subject
Language
Abstract
We report on a GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) using atomic layer deposition (ALD) Al/sub 2/O/sub 3/ film as a gate dielectric and for surface passivation simultaneously. Compared to the conventional AlGaN/GaN HEMT of the same design, six order of magnitude smaller gate leakage current and tripled drain current at forward gate bias demonstrate the effectiveness of ALD Al/sub 2/O/sub 3/ as a gate dielectric. The high transconductance and high effective two-dimensional electron mobility verify the high-quality of Al/sub 2/O/sub 3//AlGaN interface with low interface trap density. The Al/sub 2/O/sub 3/ passivation effect is also studied by sheet resistance measurement and short pulse drain characterization.