학술논문
Simplified Calculations of Radiation Dose-Rate Sensitivity of Bipolar Transistors
Document Type
Conference
Author
Source
2021 21th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Radiation and Its Effects on Components and Systems (RADECS), 2021 21th European Conference. :1-5 Sep, 2021
Subject
Language
ISSN
1609-0438
Abstract
A simplified approach to estimating radiation-induced Si-SiO2 interface trap densities, based on steady-state populations of relevant mobile species, is presented. The dose-rate sensitivity arises from bimolecular reaction terms. Molecular hydrogen increases the effects of ionizing radiation. Exciton contributions explain effects at high dose-rates. Calculations are consistent with known trends in dose, dose rate, hydrogen content and temperature.