부산대학교 도서관

Lateral GaN-based transistors (HEMTs) for power-electronic switching up to 650 V have not yet approached their theoretical material limit in terms of R ON A vs. V Br – unlike Si and SiC based devices. The inherent compromise between breakdown strength and dispersion by the usually required GaN-buffer compensation doping is one reason. Related dispersion effects should be absent when using AlN without any doping as buffer material and the high conduction-band offset at the AlN-buffer / GaN-channel interface (Fig. 1) should effectively confine the GaN transistor channel [1]. This would result into a steeper breakdown voltage scaling with gate-drain distance, than the typically observed 100-120 V/µm in GaN HEMTs with carbon-doped GaN buffer [2].