학술논문

Proton-irradiation of Cu(In,Ga)Se/sub 2/ and CuInS/sub 2/ thin-film solar cells
Document Type
Conference
Source
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Photovoltaic specialist conference Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE. :1038-1041 2000
Subject
Photonics and Electrooptics
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Power, Energy and Industry Applications
Protons
Photovoltaic cells
Thin film devices
Costs
Flexible structures
Solar power generation
Orbits
Degradation
Time of arrival estimation
Transistors
Language
ISSN
0160-8371
Abstract
Data of proton irradiated solar cells of the CIS-types (CuInS/sub 2/ as well as Cu(In,Ga)Se/sub 2/) are presented demonstrating the excellent radiation hardness of these thin-film devices against space radiation. Cost and weight considerations and the possible flexible structure are among the interesting points to use these cells as solar generators especially in orbits across the inner Van-Allen-belt. The degradation of the fundamental electrical parameters (I/sub SC/, V/sub OC/, FF and /spl eta/) of these thin film solar cells is shown. The impact of different proton energies on the damage coefficient is correlated with the in-depth scattering processes of protons within the device. The maximum damage is produced when the rest position of the protons is within the vicinity of the absorber bulk region.