학술논문

Modeling of Schottky barrier diode millimeter-wave multipliers at cryogenic temperatures
Document Type
Conference
Source
2015 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC) Microwave and Optoelectronics Conference (IMOC), 2015 SBMO/IEEE MTT-S International. :1-4 Nov, 2015
Subject
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Power, Energy and Industry Applications
Schottky diodes
Temperature
Schottky barriers
Solid modeling
Cryogenics
cryogenic temperature
frequency multiplier
GaAs diodes
millimeter wave
varactor
Language
Abstract
We report on the evaluation of Schottky barrier diode GaAs multipliers at cryogenic temperatures. A GaAs Schottky barrier diode model is developed for theoretical estimation of doubler performance. The model is used to predict efficiency of doublers from room to cryogenic temperatures. The theoretical estimation is verified experimentally using a 78 GHz doubler cooled down to 14 K. The observed efficiency improvement due to cooling is approximately 4 % per 100 degrees.