부산대학교 도서관

We report the 94 GHz large-signal load-pull performance of (0.3 × 9) μm 2 InP/Ga(In)AsSb double heterojunction bipolar transistors (DHBTs) in the common-emitter (CE) and common-base (CB) configurations. Both configurations were implemented side-by-side on either 20-nm-thick graded GaAsSb- or GaInAsSb-base layers. A measured record saturated output power P OUT,SAT = 14.5 dBm with a corresponding power density 10.4 mW/μm 2 were achieved in the GaInAsSb-base CB configuration. The performance follows from i ) the higher power gain in the CB topology and, ii ) the superior BV CEO and BV CBO breakdown voltages obtained with the quaternary base which allow degradation-free operation at higher voltages. Load-pull contours show a combination of high output power and power gain in the proximity of 50 Ω for a wide range of load impedances. In contrast, CB InP/GaAsSb DHBTs deliver P OUT,SAT = 10.6 dBm and 4.3 mW/μm 2 . For all devices considered here, CB operation improves transistor robustness against high-power device degradation. The present work provides the first report on the power performance of quaternary InP/GaInAsSb DHBTs in CE/CB topologies, with comparison to ternary InP/GaAsSb DHBTs.