학술논문
Wideband Type-II GaInAsSb/InP Uni-Traveling Carrier Photodiodes for Near 300 Gbps Communications
Document Type
Periodical
Author
Source
Journal of Lightwave Technology J. Lightwave Technol. Lightwave Technology, Journal of. 42(8):2842-2847 Apr, 2024
Subject
Language
ISSN
0733-8724
1558-2213
1558-2213
Abstract
We report the wideband performance of uniform Type-II GaInAsSb/InP UTC-PDs for optical data communications near 300 Gbps. A wide bandwidth of $>$110 GHz is achieved for a device area of 50 $\mu$m$^{2}$. In signal transmission measurements, the present UTC-PDs show a low Bit-Error Rate (BER) and a high Signal-to-Noise Ratio (SNR) of more than 18 dB at data rates as high as 288 Gbps (96 GBd, PAM-8) without post-amplification electronics. The work demonstrates the suitability of GaInAsSb/InP UTC-PDs for optical data transmission at bit rates approaching 300 Gbps.