학술논문
Improved p-doping profiles in lasers and modulators
Document Type
Conference
Author
Source
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Indium phosphide and related materials Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th. :627-630 2002
Subject
Language
ISSN
1092-8669
Abstract
Zn diffusion during MOCVD growth is studied in a series of different structures using SIMS analysis. A first experiment supports a concentration dependent diffusion rate, and a +1 charge on the Zn interstitial. The Zn diffusion front is found to be quite sharp, and this is used advantageously in combination with an undoped spacer layer in a p-i-n structure. Further experiment explores the effect of p+ InGaAs caps (both C and Zn doped) on the diffusion in underlying p to undoped (p-i) interfaces, and find that there is minimal impact.