학술논문

Gallium arsenide-on-germanium solar cells
Document Type
Conference
Source
Proceedings of the 24th Intersociety Energy Conversion Engineering Conference Energy Conversion Engineering Conference, 1989. IECEC-89., Proceedings of the 24th Intersociety. :791-797 vol.2 1989
Subject
Power, Energy and Industry Applications
III-V semiconductor materials
Gallium arsenide
Photovoltaic cells
Production
Inductors
Space technology
Temperature
Solar energy
Throughput
MOCVD
Language
Abstract
The development of technology and processing methods for producing high-efficiency GaAs solar cells for use on spacecraft is described. High-throughput MOCVD (metalorganic chemical vapor deposition) and subsequent cell processing led to delivery of production quantities of GaAs cells formed on GaAs substrates. To meet advanced array requirements calling for high-efficiency cells which are larger and thinner, GaAs cells were grown on Ge substrates. How GaAs/Ge cells are now meeting production requirements is described.ETX

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