부산대학교 도서관

Domain-wall magnetic tunnel junctions (MTJs) are a new spintronic device family that may be exploited in resilient edge logic processors or neuromorphic edge accelerators in the future. Here, domain-wall MTJ logic devices were exposed to large total ionizing doses (TIDs), heavy ion displacement damage, or both. The parts demonstrated complete resilience to the ionizing radiation, but ion-irradiated parts followed a similar degradation curve to previously tested tunnel junction parts in response to heavy ion irradiation. Microscopy and spectroscopy methods confirm significant damage in some devices.