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A Novel Hybrid High-Speed and Low Power Antiferroelectric HSO Boosted Charge Trap Memory for High-Density Storage
Document Type
Conference
Author
Ali, T.; Mertens, K.; Olivo, R.; Rudolph, M.; Oehler, S.; Kuhnel, K.; Lehninger, D.; Muller, F.; Lederer, M.; Hoffmann, R.; Schramm, P.; Biedermann, K.; Kia, Alireza M.; Metzger, J.; Binder, R.; Czernohorsky, M.; Kampfe, T.; Muller, J.; Seidel, K.; Houdt, J. Van; Eng, L. M.
Source
2020 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2020 IEEE International. :18.3.1-18.3.4 Dec, 2020
Subject
Components, Circuits, Devices and Systems
Voltage measurement
Benchmark testing
Iron
Hybrid power systems
Dielectrics
Hysteresis
Switching circuits
Language
ISSN
2156-017X
Abstract
We report on antiferroelectric (AFE) hybrid charge trap (CT) memory with amplified tunnel oxide field via dynamic AFE hysteresis dipole switching. Memory window (4.5V), switching speed (

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