부산대학교 도서관

In this study, we have systematically investigated the impact of intrinsic device parameters on the performance of beta gallium oxide ( $\beta $ -Ga2O3) nanomembrane metal–semiconductor field effect transistors (NM-MESFETs). The ON- and OFF-state performances of these devices were analyzed using a well-calibrated technology computer-aided design (TCAD) simulator, focusing on breakdown voltage ${(} {V}_{\text {BR}} {)}$ , ON-resistance ( ${R}_{\text {ON}}{)}$ , threshold voltage ${(} {V}_{\text {th}} {)}$ , maximum drain current ${(} {I}_{\text {D},\text {max}} {)}$ , and power figure of merit ${(} \text {PFOM} {)}$ . Two distinct breakdown mechanisms are identified, significantly affecting ${V}_{\text {BR}}$ of these NM-MESFETs. Interestingly, when studying the effect of individual device parameters on ${V}_{\text {BR}}$ , we observed an initial increasing trend up to a critical value, followed by a sharp fall and a subsequent decreasing trend. Through simulations, an empirical model is developed that facilitates the selection of appropriate device parameters to achieve MESFETs with high ${V}_{\text {BR}}$ . In addition, an analytical model of ${V}_{\text {th}}$ of the MESFET in terms of its device parameters is also proposed and validated with simulation results. The performance of the NM devices is also benchmarked against reported Ga2O3 devices.