학술논문
A new spectral approach to modeling charge trapping/detrapping in NAND Flash memories
Document Type
Conference
Author
Source
2014 IEEE International Reliability Physics Symposium Reliability Physics Symposium, 2014 IEEE International. :2E.2.1-2E.2.6 Jun, 2014
Subject
Language
ISSN
1541-7026
1938-1891
1938-1891
Abstract
We present a semi-analytical model for the description of charge trapping and detrapping phenomena occurring during cycling and idle periods in NAND Flash memories. The model is based on a statistical distribution of detrapping time constants that is affected by the composition of cycles and idle periods and accounts for charge discreteness, statistical charge capture and emission and statistical distribution of the threshold-voltage shift due to single detrapping events. The model can reproduce the experimental data under different conditions and allows to develop and monitor accelerated schemes able to mimic realistic on-field usage of the memory device.