학술논문

A single chip 2-20 GHz T/R module
Document Type
Conference
Source
IEEE International Digest on Microwave Symposium Microwave Symposium Digest, 1990., IEEE MTT-S International. :117-120 vol.1 1990
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Aerospace
Communication, Networking and Broadcast Technologies
Photonics and Electrooptics
MMICs
Low-noise amplifiers
Switches
Microwave integrated circuits
Monolithic integrated circuits
Microwave amplifiers
Switching circuits
Ion implantation
Implants
Distributed amplifiers
Language
Abstract
A single chip 2-20-GHz transmit/receive (T/R) module has been demonstrated. This MMIC (monolithic microwave integrated circuit) included a four-stage power amplifier chain, a four-stage low-noise amplifier chain, and two T/R switches. A selective ion implantation process was used. One implant profile was optimized for low-noise operation, and a second was optimized for power performance. All circuits were designed to be relatively insensitive to process variations to ensure adequate yield, despite the complexity of the chip. Distributed amplifiers were used throughout, and the T/R switches used a standard series-shunt FET configuration. All circuits were miniaturized to keep the total chip size small. The entire T/R is only 0.143 in*0.193 in (3.6 mm*4.9 mm).ETX

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