학술논문

Analysis of SRAM-Based FPGA SEU Sensitivity to Combined Effects of Conducted EMI and TID
Document Type
Conference
Source
2015 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on. :1-4 Sep, 2015
Subject
Components, Circuits, Devices and Systems
Field programmable gate arrays
Voltage fluctuations
Electromagnetic interference
Single event upsets
Sensitivity
Power supplies
Current measurement
Language
Abstract
This work proposes a novel methodology to evaluate SRAM-Based FPGA SEU susceptibility to noise on VDD power pins and total-ionizing dose (TID). The procedure was demonstrated for SEU measurements on a Xilinx Spartan 3E FPGA operating in an 8MV Pelletron accelerator, whereas TID was deposited by means of a Shimadzu XRD-7000 X-ray diffractometer. The injected noise on power supply bus comprised of voltage dips of 16.67% and 25% of VDD at two different frequencies 10Hz and 5kHz, and was performed according to the IEC 61.000-4-29 international standard.