학술논문

Analyzing the influence of voltage scaling for soft errors in SRAM-based FPGAs
Document Type
Conference
Source
2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on. :1-5 Sep, 2013
Subject
Components, Circuits, Devices and Systems
Photonics and Electrooptics
Field programmable gate arrays
Neutrons
Tunneling magnetoresistance
Microprocessors
Random access memory
Transistors
Performance evaluation
Language
Abstract
The susceptibility of SRAM-based FPGAs to soft errors has shown to increase with technology scaling due to the reduction of transistor size and reduced voltage supply. This work presents the actual impact of voltage reductions in the vulnerability of SRAM-based FPGAs to neutron-induced soft errors in terms of static and dynamic cross-sections. Experimental results under neutron radiation exposure show that for a 45nm SRAM-based FPGA, a 19% reduction in the VDD supply voltage can result in a 92% higher cross-section.