부산대학교 도서관

The empty substrate integrated waveguide (ESIW) presents the same advantages as the substrate integrated waveguide (SIW): low cost, low profile, and easy integration, but with lower insertion losses because the dielectric is removed. In order to increase the operational usable bandwidth, one or two ridge layers can be added to the ESIW, leading to the single ridge ESIW (RESIW) or the double ridge ESIW (DRESIW). A transition from microstrip to DRESIW has already been presented, but no other passive components have been implemented in this technology yet. This letter presents a broadband 3-dB DRESIW power divider based on an $H$ -plane T-junction with compensation elements, which can be easily manufactured using standard planar circuit manufacturing techniques. The manufactured prototype presents measured return losses greater than 12 dB from 6.9 to 20.4 GHz, representing a 99% fractional bandwidth (FBW), whereas the power division is rather symmetric since the maximum $S_{21}$ and $S_{31}$ parameters are −3.98 and −3.78 dB, respectively.