학술논문

Fabrication of La2Ti2O7 nanostructures by focused Ga3+ ion beam and characterization by piezoresponse force microscopy
Document Type
Conference
Source
Proceedings of ISAF-ECAPD-PFM 2012 Applications of Ferroelectrics held jointly with 2012 European Conference on the Applications of Polar Dielectrics and 2012 International Symp Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials (ISAF/ECAPD/PFM), 2012 Intl Symp. :1-3 Jul, 2012
Subject
Components, Circuits, Devices and Systems
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Films
Ion beams
Lead
Nanoscale devices
Nanostructures
Force
La2Ti2O7 thin films
Piezoelectric lead-free oxide
Focused Ga3+ ion beam
Nanostructured materials
Island structure
Piezoresponse Force Microscopy
Language
ISSN
1099-4734
2375-0448
Abstract
(012)-oriented lead-free La 2 Ti 2 O 7 thin films with the monoclinic/perovskite layered structure have been grown by a solgel route on (100)-oriented doped Nb:SrTiO 3 substrates. On nanoscale, both poling experiments performed via the tip of atomic force microscope and the existence of local piezoloops within the domains confirm the piezo-/ferro-electric behaviour of the films. Islands in the lateral range 300–500 nm have been fabricated by focused Ga 3+ ion beam etching on platinum top electrode. As measured on piezoloops, electromechanical activity within the islands is shown to be similar to the one obtained for the virgin film; no piezoelectric degradation for La 2 Ti 2 O 7 islands is highlighted. These results confirm that La 2 Ti 2 O 7 is a highly resistant oxide to ion-beam irradiation. La 2 Ti 2 O 7 could be considered as a material of choice for the realization of lead-free piezoelectric nanostructures.