학술논문
High Capacitive Ratio Molybdenum-based RF MEMS Capacitive Shunt Switch using Reduced Fabrication Steps
Document Type
Conference
Source
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2024 8th IEEE. :1-3 Mar, 2024
Subject
Language
Abstract
This paper presents the design and fabrication of a high-performance molybdenum-based capacitive Radio Frequency Micro-Electro-Mechanical-Systems (RF MEMS) shunt switch. Molybdenum offers high robustness against stress and temperature compared to gold. The measured results show that switches provide return loss better than 15.05dB, insertion loss less than 1.42 dB (Off state), and isolation better than 17.69dB during (On state) in Ka-band. The capacitive ratio achieved is 300, with a maximum pull-in voltage of 7.6V.