학술논문
Design of a Ku-band high gain low noise amplifier
Document Type
Conference
Author
Source
2013 IEEE International RF and Microwave Conference (RFM) RF and Microwave Conference (RFM), 2013 IEEE International. :168-171 Dec, 2013
Subject
Language
Abstract
A single stage low noise amplifier is developed for Ku-band applications. The design is aimed to provide low noise figure and high associated gain. Submicron gate length GaAs MESFET is used as an active device because of its superior high frequency properties. Device equivalent circuit parameters are first evaluated with and without pad capacitors using measured S-parameters. Low noise amplifier is then designed by employing common source configuration. Additional circuit components are employed to achieve unconditional stability. Whereas, matching networks of different types are evaluated to achieve VSWR closer to unity. Simulated data showed a bandwidth of 1.63 GHz with minimum noise figure 1.02 dB and 14.1 dB associated gain.