학술논문
Stacked Nanowires FETs: Mechanical robustness evaluation for sub-7nm nodes
Document Type
Conference
Author
Source
2016 IEEE Silicon Nanoelectronics Workshop (SNW) Silicon Nanoelectronics Workshop (SNW), 2016 IEEE. :136-137 Jun, 2016
Subject
Language
Abstract
Stacked Nanowires FETs are proposed to replace FinFET and FDSOI for sub-7nm nodes. While most studies demonstrate the performances gain offered by such structures, mechanical stability of the suspended silicon channels needs to be considered. This paper provides a fully mechanical analytical description of nanowire stacks to explain the occurrence of buckling phenomena of silicon channels.